RESEARCH INTERESTS

In modern packaging technology of multichip modules for various application like a supercomputer system or for very high performance MOS analog and digital applications efficient heatsinks play a very important role. An advanced electromechanical heatsink using Silicon Carbide as heatsink material may prove to be more compatible in cooling of such modules than other type of materials. This proposal deals with in-situ bonding methods using thin intervening layers of various inorganic materials, and their characterization. Objective of this project is to define processing steps and improve techniques for bonding SiC in clean processing area. Thermal oxidation and annelaing SiC slabs using methods would be employed to bond SiC labs using thin inorganic films evaporated, sputtered, and grown by cvd methods, and used as an overlayer on one or both slabs. The bonding efficiency would be estimated by knife edge stressing methods and other types of stress testing techniques. This will form the basis of selecting a low thermal budget bonding technique with right composition and stoichemetry of the intervening layer. Thin and thick slab bonding effects in terms of internal stress at the interface would be tested. Some aspects of liquid coolant effects and environmental tests would be made to evaluate corrosion and strength of the bond of the systems under study. Currently, we are doing funded research on the properties of lithium and its various compounds for use in a new generation of battery.